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Vertical alignment of liquid crystal through ion beam exposure on oxygen-doped SiC films deposited at room temperature
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10.1063/1.2783182
/content/aip/journal/apl/91/10/10.1063/1.2783182
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/10/10.1063/1.2783182
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Pretilt angle of LC cells aligned on SiOC films as a function of the deposition temperature. Images of vertically aligned LC cells between crossed polarizers (a) without and (b) with the ion beam exposure on SiOC films deposited at room temperature.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Transmission spectra of a SiOC film and a film deposited at room temperature and a rubbed polyimide layer. (b) Relative light leakage of LC cells ion beam aligned on SiOC films and films as functions of the deposition temperature.

Image of FIG. 3.
FIG. 3.

(Color online) Surface roughness of SiOC films and films measured by AFM as functions of the deposition temperature.

Image of FIG. 4.
FIG. 4.

(Color online) Measured pretilt angles of vertically aligned LC cells as a function of the ion beam incident angle.

Image of FIG. 5.
FIG. 5.

(Color online) EFM data of SiOC film surfaces as a function of the ion beam exposure time.

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/content/aip/journal/apl/91/10/10.1063/1.2783182
2007-09-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical alignment of liquid crystal through ion beam exposure on oxygen-doped SiC films deposited at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/10/10.1063/1.2783182
10.1063/1.2783182
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