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Current density–voltage characteristics of the devices under the forward bias condition. Inset shows the quantity plotted as a function of . is in . and represent the injection barriers of Si-rich and N-rich , respectively.
Room temperature EL spectra of the devices: (a) the N-rich device and (b) the Si-rich device.
EL intensity of two devices as a function of electrical input powers. Inset shows the EL integrated intensity as a function of the forward voltage for the N-rich device and the Si-rich device, respectively.
PL spectra of luminescent samples excited by the line. Inset shows TEM images of two luminescent active layers: (a) the N-rich and (b) the Si-rich .
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