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(Color online) Schematic cross section of the IGZO TFTs, which have an inverted staggered bottom gate structure.
(Color online) Representative output characteristics of the TFT with deposited at rf IZO powers of (a) (reference sample) and (b) . The representative output characteristics of the TFT with deposited at (c) reference condition and (d) . The linear behavior in the low region in the output curves indicates the Ohmic contact between the IZO and channels. The stability data as a function of stress time under constant drain current of were shown in the inset of (b).
(Color online) (a) Dependence of the IZO rf power on the and parameters of the TFTs with the cosputtered films. (b) Dependence of the IZO rf power on the and parameters of the TFTs with the cosputtered films. was determined by the drain current at and .
Indium, gallium, and zinc content of as a function of the IZO rf power. Also, the interface trap density was extracted and summarized for each TFT. The atomic ratio of the IGZO film was analyzed by inductively coupled plasma mass spectroscopy. The ratio of increased monotonously with increasing IZO rf power.
Comparison of the various parameters including , , ratio, , and for the three samples. The standard deviations for each parameter were determined from the evaluation of six TFTs on one sample.
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