1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
Rent:
Rent this article for
USD
10.1063/1.2783961
/content/aip/journal/apl/91/11/10.1063/1.2783961
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/11/10.1063/1.2783961

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic cross section of the IGZO TFTs, which have an inverted staggered bottom gate structure.

Image of FIG. 2.
FIG. 2.

(Color online) Representative output characteristics of the TFT with deposited at rf IZO powers of (a) (reference sample) and (b) . The representative output characteristics of the TFT with deposited at (c) reference condition and (d) . The linear behavior in the low region in the output curves indicates the Ohmic contact between the IZO and channels. The stability data as a function of stress time under constant drain current of were shown in the inset of (b).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Dependence of the IZO rf power on the and parameters of the TFTs with the cosputtered films. (b) Dependence of the IZO rf power on the and parameters of the TFTs with the cosputtered films. was determined by the drain current at and .

Tables

Generic image for table
Table I.

Indium, gallium, and zinc content of as a function of the IZO rf power. Also, the interface trap density was extracted and summarized for each TFT. The atomic ratio of the IGZO film was analyzed by inductively coupled plasma mass spectroscopy. The ratio of increased monotonously with increasing IZO rf power.

Generic image for table
Table II.

Comparison of the various parameters including , , ratio, , and for the three samples. The standard deviations for each parameter were determined from the evaluation of six TFTs on one sample.

Loading

Article metrics loading...

/content/aip/journal/apl/91/11/10.1063/1.2783961
2007-09-11
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/11/10.1063/1.2783961
10.1063/1.2783961
SEARCH_EXPAND_ITEM