1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements
Rent:
Rent this article for
USD
10.1063/1.2783971
/content/aip/journal/apl/91/11/10.1063/1.2783971
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/11/10.1063/1.2783971

Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics of the nc-Si TFT. The aspect ratio is . The dependence of gate leakage current on the gate bias is also shown.

Image of FIG. 2.
FIG. 2.

Threshold voltage shift as a function of time for different stress currents and temperatures: (a) and (b) . Filled circles: TFT; open circles: nc-Si TFT; line: calculations using stretched-exponential Eq. (1) for charge trapping. The data are from Ref. 9.

Image of FIG. 3.
FIG. 3.

Threshold voltage shift of the nc-Si TFT at different temperatures as a function of the thermalization energy at stress . The solid line denotes calculated values using Eq. (2).

Tables

Generic image for table
Table I.

Parameter values for Eq. (1) resulting from fit to measured data indicated in Figs. 2(a) and 2(b).

Loading

Article metrics loading...

/content/aip/journal/apl/91/11/10.1063/1.2783971
2007-09-12
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/11/10.1063/1.2783971
10.1063/1.2783971
SEARCH_EXPAND_ITEM