Full text loading...
Transfer characteristics of the nc-Si TFT. The aspect ratio is . The dependence of gate leakage current on the gate bias is also shown.
Threshold voltage shift as a function of time for different stress currents and temperatures: (a) and (b) . Filled circles: TFT; open circles: nc-Si TFT; line: calculations using stretched-exponential Eq. (1) for charge trapping. The data are from Ref. 9.
Threshold voltage shift of the nc-Si TFT at different temperatures as a function of the thermalization energy at stress . The solid line denotes calculated values using Eq. (2).
Parameter values for Eq. (1) resulting from fit to measured data indicated in Figs. 2(a) and 2(b).
Article metrics loading...