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Phase transition temperature of ultrathin films: An annealing study by ultraviolet Raman spectroscopy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) UV Raman spectra at of the STO thin films grown by MBE on Si substrate at different of 700, 800, 900, and . Peaks with ▿ are related to the second-order processes, and those with ▾ to Si substrate. (b) Temperature evolution of phonon of the STO thin films under . All spectra are plotted on the same scale, offset for clarity.

Image of FIG. 2.
FIG. 2.

Temperature dependence of normalized Raman intensities of phonons (solid squares) for the four STO thin films with different . The solid curves are fits to the linear temperature dependence.

Image of FIG. 3.
FIG. 3.

Dependence of on the thermal expansion coefficient mismatch and thermal strain determined from the hard mode Raman intensities of different . The dotted curve displays a linear fit to the thermal strain dependence, the dashed one demonstrates the predicted behavior of (Ref. 30).

Image of FIG. 4.
FIG. 4.

Raman frequency of the hard mode in STO thin films with different as a function of temperature. The dash-dotted lines show points where this mode vanishes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase transition temperature of SrTiO3 ultrathin films: An annealing study by ultraviolet Raman spectroscopy