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Band structure of one period of 3392 showing the moduli squared of the relevant wave functions. In the text, ground states and first excited states are identified by the indices 1 and 2, respectively.
Responsivities at . Left inset: schema of a sample processed for responsivity measurements. Right inset: temperature dependence of the responsivity for 3392.
(Color online) Responsivities of 3505 at for different applied fields. Top: measured spectra (grey fill) and fits (black thick line) consisting of three Lorentzians (black, blue, and red thin lines) at , , and . Center: measured peak energies of the low- and high-energy Lorentzians (blue and red triangles), corresponding simulation results (blue and red dashed line), and global peak responsivity energy (black squares). Bottom: amplitude of the fitted Lorentzians (blue and red triangles) and simulated squared dipole matrix elements (blue and red dashed lines).
(Color online) characteristic at different temperatures of sample 3505. Solid lines were measured under glowbar illumination and dashed lines were measured under background illumination.
Layer sequences for one period of each sample starting with the thickest QW. InGaAs QW and AlAsSb barrier thicknesses are given in angstroms. is the measured peak responsivity energy at and is the contact layer doping density.
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