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Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Bright field HRTEM image of the GaN epilayer after the LLO process. [(b) and (c)] Fast Fourier transforms of different regions shown by the arrows. (d) Bright field HRTEM image showing the distorted atomic chains in (0001) plane.

Image of FIG. 2.
FIG. 2.

(a) TEM image showing that a cluster of half loops end to end spreads over the LLO interface. (b) Magnified part of the dashed square region in (a).

Image of FIG. 3.
FIG. 3.

(a) HRTEM image showing one of the half loops. (b) Inverse fast Fourier transform of part of one half loop using diffraction spots along the [0001] direction.

Image of FIG. 4.
FIG. 4.

(a) HRTEM processed image showing the lattice damage of the steady-state shock waves. (b) Inversed fast Fourier transform of (a) using the (0001) and spots. (c) Magnification of the rectangle region in the processed image shown in (a).

Image of FIG. 5.
FIG. 5.

(Color online) Propagation of the elastic-plastic-elastic wave modes in the LLO GaN film described by characteristic lines are shown in the diagram. Inset is the curve of the LLO-induced load added to the GaN film.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques