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(a) Bright field HRTEM image of the GaN epilayer after the LLO process. [(b) and (c)] Fast Fourier transforms of different regions shown by the arrows. (d) Bright field HRTEM image showing the distorted atomic chains in (0001) plane.
(a) TEM image showing that a cluster of half loops end to end spreads over the LLO interface. (b) Magnified part of the dashed square region in (a).
(a) HRTEM image showing one of the half loops. (b) Inverse fast Fourier transform of part of one half loop using diffraction spots along the  direction.
(a) HRTEM processed image showing the lattice damage of the steady-state shock waves. (b) Inversed fast Fourier transform of (a) using the (0001) and spots. (c) Magnification of the rectangle region in the processed image shown in (a).
(Color online) Propagation of the elastic-plastic-elastic wave modes in the LLO GaN film described by characteristic lines are shown in the diagram. Inset is the curve of the LLO-induced load added to the GaN film.
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