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(a) Cross sectional and (b) plane view scanning electron microscopy images of a typical nanowire film. Scale bars in (a) and (b) are . (c) HRTEM of a nanowire. In (c), the scale bar is .
Current-voltage characteristic of a nanowire DSSC under AM1.5 illumination. The inset shows the incident photon-to-current conversion efficiency.
(a) Scaled photocurrent decay response of a nanowire DSSC at various laser intensities (100% laser ). The lines are the best fit to the data with biexponential decay. The inset shows the photocurrent response to a small square-wave modulation (6%) in laser intensity. (b) A typical IMPS response of a nanowire DSSC.
(a) Recombination (▵, ◇) and (b) transport (엯, ●, ◻, ∎) time constants for nanowire DSSCs as a function of short circuit current (light intensity). In (b), open (엯, ◻) and filled symbols (●, ∎) represent transport times extracted from IMPS and photocurrent decay, respectively. Data for two cells (엯, ●) and (◻, ∎) are shown to illustrate reproducibility. Similarly, recombination time constant data are shown for two different cells (◇, ▵) in (a).
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