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Spontaneous and stimulated emissions of a modulated InGaN QW. Spectrally integrated intensity collected from one facet of a laser diode for current density typical for LED operation (; black) and above (; gray) lasing threshold. The times when the square driving pulses with 50% duty cycle are on are shown as shaded areas. Intensity scale is different for both curves.
(Color online) Conduction and valence band edges for a InGaN QW embedded in a junction (schematic drawing). For positive bias (forward current), the tilt in the QW is given by the piezoelectric field in the strained QW (a). For zero (or negative) bias, the piezoelectric field is partially compensated by the field of the built-in potential of the junction, decreasing the QW tilt (b).
(Color online) Intensity decay and center wavelength shift. Linear (a) and logarithmic (b) plot of the integrated intensity at the trailing edge of the driving pulse and center wavelength (c) of the spectra. Intensity is normalized to the intensity during the pulse. Bias voltages are , , , , 0.0, and .
(Color online) Integrated intensity of the decaying EL after the end of the driving pulse (circles), recombination rate (squares), and radiative recombination rate up to an unknown proportionality rate (diamonds) for different bias voltages.
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