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Concerning the band in the Raman spectrum of silicon nanowires
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10.1063/1.2786606
/content/aip/journal/apl/91/12/10.1063/1.2786606
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2786606
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of Si-IV and Si-I nanowires acquired at different locations over the sample. Note that the spectrum (a) remains stable under the power density used. Mixed Gaussian-Lorentzian deconvolutions are also shown.

Image of FIG. 2.
FIG. 2.

Raman spectra acquired after irradiating the sample with increasing laser power densities. Experimental annealing temperatures are calculated from Stokes/anti-Stokes measurements.

Image of FIG. 3.
FIG. 3.

Correlation length of the laser-annealed sample as a function of the annealing temperatures. All data points were calculated through Eqs. (1) and (2) using experimental data collected from Raman spectra in Fig. 2.

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/content/aip/journal/apl/91/12/10.1063/1.2786606
2007-09-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Concerning the 506cm−1 band in the Raman spectrum of silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2786606
10.1063/1.2786606
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