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Focused ion beam implantation induced site-selective growth of InAs quantum dots
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10.1063/1.2786836
/content/aip/journal/apl/91/12/10.1063/1.2786836
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2786836
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of InAs quantum dots grown on patterned GaAs (spots with pitch) employing different thermal process steps prior to quantum dot growth. (a) shows data for a process without in situ annealing step. The results for an in situ annealing step without GaAs reevaporation ( at ), for an in situ annealing step with GaAs reevaporation ( at ), and for an in situ annealing step with GaAs reevaporation ( at ) are shown in (b)–(d).

Image of FIG. 2.
FIG. 2.

(Color online) (a) Average number of quantum dots per FIB spot as a function of the nominal InAs coverage for a spot dose of ions. (b) Dot occupancy statistics for different spot doses at 1.53 ML InAs coverage.

Image of FIG. 3.
FIG. 3.

AFM image of site-selective quantum dot array structure with periodicity.

Image of FIG. 4.
FIG. 4.

(Color online) PL spectra of positioned InAs QDs for an implantation dose of ions/spot (1.59 ML InAs) at different excitation powers (from bottom to top: 0.08, 0.3, and ). The measurements have been performed at around 2700 QDs and the assignment of the PL peaks to ground state and excited states is indicated on the individual peaks.

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/content/aip/journal/apl/91/12/10.1063/1.2786836
2007-09-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Focused ion beam implantation induced site-selective growth of InAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2786836
10.1063/1.2786836
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