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SEM images of InAs quantum dots grown on patterned GaAs (spots with pitch) employing different thermal process steps prior to quantum dot growth. (a) shows data for a process without in situ annealing step. The results for an in situ annealing step without GaAs reevaporation ( at ), for an in situ annealing step with GaAs reevaporation ( at ), and for an in situ annealing step with GaAs reevaporation ( at ) are shown in (b)–(d).
(Color online) (a) Average number of quantum dots per FIB spot as a function of the nominal InAs coverage for a spot dose of ions. (b) Dot occupancy statistics for different spot doses at 1.53 ML InAs coverage.
AFM image of site-selective quantum dot array structure with periodicity.
(Color online) PL spectra of positioned InAs QDs for an implantation dose of ions/spot (1.59 ML InAs) at different excitation powers (from bottom to top: 0.08, 0.3, and ). The measurements have been performed at around 2700 QDs and the assignment of the PL peaks to ground state and excited states is indicated on the individual peaks.
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