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Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN
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10.1063/1.2786838
/content/aip/journal/apl/91/12/10.1063/1.2786838
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2786838
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic -type sample structure grown on the (0001) plane of sapphire substrate.

Image of FIG. 2.
FIG. 2.

(Color online) Room-temperature photoluminescence spectra of undoped and heavily doped samples.

Image of FIG. 3.
FIG. 3.

(Color online) Peak intensity ratio between the UV and parasitic blue emissions, , as a function of silane flow rate.

Image of FIG. 4.
FIG. 4.

(Color online) Band diagram of -type illustrating near-band-edge UV emission and parasitic blue emission coming from a deep-level transition.

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/content/aip/journal/apl/91/12/10.1063/1.2786838
2007-09-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Parasitic sub-band-gap emission originating from compensating native defects in Si doped AlGaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2786838
10.1063/1.2786838
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