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Correlation between biaxial stress and free exciton transition in AlN epilayers
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10.1063/1.2789182
/content/aip/journal/apl/91/12/10.1063/1.2789182
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2789182
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of , , , and bulk, measured in (a) a broad spectral range from and (b) small spectral range from .

Image of FIG. 2.
FIG. 2.

(Color online) Arrhenius plot of the intensity of the dominant emission line ( at ) in epilayers. The measured activation energy is about . (b) Arrhenius plot of the intensity of the lower energy emission line ( at ) in homoepilayers. The measured activation energy is about . The inset shows the temperature evolution of the band edge emissions in AlN homoepilayers.

Image of FIG. 3.
FIG. 3.

Theta-2theta scan of (a) asymmetric (102) and (b) symmetric (002) reflection planes for an AlN homoepilayer and AlN bulk substrate.

Image of FIG. 4.
FIG. 4.

Free exciton spectral peak positions and (b) in-plane lattice constants of AlN epilayers grown on different substrates. Stress in is compressive and is tensile in and epilayers.

Image of FIG. 5.
FIG. 5.

Stress-induced shift of the free exciton emission peak position in AlN epilayers as a function of the in-plane stress. The solid line is the least-squares linear fit of the experimental data. The linear coefficient of stress-induced bandgap shift in AlN epilayers is deduced to be .

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/content/aip/journal/apl/91/12/10.1063/1.2789182
2007-09-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between biaxial stress and free exciton transition in AlN epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/12/10.1063/1.2789182
10.1063/1.2789182
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