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PL spectra of , , , and bulk, measured in (a) a broad spectral range from and (b) small spectral range from .
(Color online) Arrhenius plot of the intensity of the dominant emission line ( at ) in epilayers. The measured activation energy is about . (b) Arrhenius plot of the intensity of the lower energy emission line ( at ) in homoepilayers. The measured activation energy is about . The inset shows the temperature evolution of the band edge emissions in AlN homoepilayers.
Theta-2theta scan of (a) asymmetric (102) and (b) symmetric (002) reflection planes for an AlN homoepilayer and AlN bulk substrate.
Free exciton spectral peak positions and (b) in-plane lattice constants of AlN epilayers grown on different substrates. Stress in is compressive and is tensile in and epilayers.
Stress-induced shift of the free exciton emission peak position in AlN epilayers as a function of the in-plane stress. The solid line is the least-squares linear fit of the experimental data. The linear coefficient of stress-induced bandgap shift in AlN epilayers is deduced to be .
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