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Response to “Comment on ‘p-type behavior from Sb-doped ZnO heterojunction diodes’” [Appl. Phys. Lett. 88, 112108 (2006)]
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1.Yow-Jon Lin, Ping-Hsun Wu, and Day-Shan Liu, Appl. Phys. Lett. 91, 136101 (2007), preceding article.
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2.L. J. Mandalapu, F. X. Xiu, Z. Yang, D. T. Zhao, and J. L. Liu, Appl. Phys. Lett. 88, 112108 (2006).
http://dx.doi.org/10.1063/1.2186516
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3.B. G. Streetman and S. Banerjee, Solid State Electronic Devices, 5th ed. (Prentice Hall, New Jersey, 2000), pp. 169227.
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/content/aip/journal/apl/91/13/10.1063/1.2767222
2007-09-25
2014-10-02

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Scitation: Response to “Comment on ‘p-type behavior from Sb-doped ZnO heterojunction diodes’” [Appl. Phys. Lett. 88, 112108 (2006)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2767222
10.1063/1.2767222
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