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Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with spatial resolution and depth resolution, using ultraviolet resonant Raman scattering
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10.1063/1.2780114
/content/aip/journal/apl/91/13/10.1063/1.2780114
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2780114
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Topographic image of a scanning area of a VLSI standard, measured by a commercially available bent-fiber probe with an aperture of .

Image of FIG. 2.
FIG. 2.

Typical Raman spectra of VLSI standards, measured using a pyramidal cantilever, with a diameter of . (a) Far-field Raman spectrum of the single-crystalline Si(100) wafer for comparison, (b) near-field Raman spectrum of the area covered by , and (c) near-field Raman spectrum of the noncovered area.

Image of FIG. 3.
FIG. 3.

(Color online) Line profiles of the peak intensity, peak-frequency shift, and linewidth in VLSI standards, respectively, measured with the pyramidal probe, along line A–B in Fig. 1. Profiles of (a) the peak intensity, (b) peak-frequency shift, and (c) linewidth. The peak-frequency shift was measured with respect to the peak frequency of the Raman line in the Si(100) wafer. The linewidth designates the full width at half maximum of the Raman spectrum.

Image of FIG. 4.
FIG. 4.

Change in the relative Raman intensity calculated by Eq. (4) as a function of the excitation wavelength.

Image of FIG. 5.
FIG. 5.

(a) Schematic diagram of Si nanodot structure, (b) the intensity map measured without the pyramidal probe, and (c) the intensity map measured with the pyramidal probe.

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/content/aip/journal/apl/91/13/10.1063/1.2780114
2007-09-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100nm spatial resolution and 5nm depth resolution, using ultraviolet resonant Raman scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2780114
10.1063/1.2780114
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