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(Color online) Topographic image of a scanning area of a VLSI standard, measured by a commercially available bent-fiber probe with an aperture of .
Typical Raman spectra of VLSI standards, measured using a pyramidal cantilever, with a diameter of . (a) Far-field Raman spectrum of the single-crystalline Si(100) wafer for comparison, (b) near-field Raman spectrum of the area covered by , and (c) near-field Raman spectrum of the noncovered area.
(Color online) Line profiles of the peak intensity, peak-frequency shift, and linewidth in VLSI standards, respectively, measured with the pyramidal probe, along line A–B in Fig. 1. Profiles of (a) the peak intensity, (b) peak-frequency shift, and (c) linewidth. The peak-frequency shift was measured with respect to the peak frequency of the Raman line in the Si(100) wafer. The linewidth designates the full width at half maximum of the Raman spectrum.
Change in the relative Raman intensity calculated by Eq. (4) as a function of the excitation wavelength.
(a) Schematic diagram of Si nanodot structure, (b) the intensity map measured without the pyramidal probe, and (c) the intensity map measured with the pyramidal probe.
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