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(Color online) Schematic of the fabrication process: (a) ion milling of wide tracks, (b) FIB milling of long, wide bridges, (c) FIB milling of nanoconstrictions at the bridge borders, and (d) SEM image of a patterned nanoconstriction.
(Top) and corresponding numerical measured at for a device with wide constrictions. (Bottom) of the same device measured at low bias current.
Change of (normalized at the smallest resistance value) due to current-induced DW displacement for a device with wide constrictions after trapping DWs at the constrictions and in the absence of external field . The arrows indicate the direction of the sweeping current.
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