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Current-induced domain wall depinning and magnetoresistance in planar spin valves
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10.1063/1.2784940
/content/aip/journal/apl/91/13/10.1063/1.2784940
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2784940
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the fabrication process: (a) ion milling of wide tracks, (b) FIB milling of long, wide bridges, (c) FIB milling of nanoconstrictions at the bridge borders, and (d) SEM image of a patterned nanoconstriction.

Image of FIG. 2.
FIG. 2.

(Top) and corresponding numerical measured at for a device with wide constrictions. (Bottom) of the same device measured at low bias current.

Image of FIG. 3.
FIG. 3.

Change of (normalized at the smallest resistance value) due to current-induced DW displacement for a device with wide constrictions after trapping DWs at the constrictions and in the absence of external field . The arrows indicate the direction of the sweeping current.

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/content/aip/journal/apl/91/13/10.1063/1.2784940
2007-09-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current-induced domain wall depinning and magnetoresistance in La0.7Sr0.3MnO3 planar spin valves
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2784940
10.1063/1.2784940
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