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X-ray diffraction patterns of PBZ thin films doped with various concentrations.
Dielectric properties for -doped PBZ films measured at room temperature as a function of frequency: (a) dielectric constant, (b) loss tangent (the inset shows measured at ), (c) dielectric tunability, and FOM of various contents at .
Temperature dependence of (a) the dielectric constant and (b) the loss tangent at zero dc bias.
Loss tangent-voltage characteristics of PBZ films measured at as a function of -doping concentration. The inset shows loss tangent-capacitance dependencies of PBZ(0)–(3): (a) room temperature of and (b) .
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