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Improved dielectric properties of -doped thin films for tunable microwave applications
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10.1063/1.2785130
/content/aip/journal/apl/91/13/10.1063/1.2785130
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2785130
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of PBZ thin films doped with various concentrations.

Image of FIG. 2.
FIG. 2.

Dielectric properties for -doped PBZ films measured at room temperature as a function of frequency: (a) dielectric constant, (b) loss tangent (the inset shows measured at ), (c) dielectric tunability, and FOM of various contents at .

Image of FIG. 3.
FIG. 3.

Temperature dependence of (a) the dielectric constant and (b) the loss tangent at zero dc bias.

Image of FIG. 4.
FIG. 4.

Loss tangent-voltage characteristics of PBZ films measured at as a function of -doping concentration. The inset shows loss tangent-capacitance dependencies of PBZ(0)–(3): (a) room temperature of and (b) .

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/content/aip/journal/apl/91/13/10.1063/1.2785130
2007-09-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved dielectric properties of Al2O3-doped Pb0.6Ba0.4ZrO3 thin films for tunable microwave applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2785130
10.1063/1.2785130
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