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Temperature dependence of Hall mobility measured at various electron densities in a -type Si MOSFET.
Shubnikov–de Haas oscillations measured at for various current densities.
Electron temperature determined as a function of input power per electron at for various electron densities (symbols). In a steady state, the input power per electron is equal to the energy loss rate. Calculated energy loss rates due to acoustic phonon scattering via deformation potential coupling are also plotted by the solid, dashed, and dotted lines for each by setting to be . The dash-dotted line denotes the calculated result for at .
dependence of the energy loss rate obtained experimentally (symbols) and theoretically (lines) for and . The solid, dashed, and dotted lines denote the results calculated with deformation potential constant as a parameter, taking both scattering-in and scattering-out processes into account. The dash-dotted line denotes the calculated result by considering only the scattering-out process with .
Materials parameters of Si used in the calculation.
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