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Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors
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10.1063/1.2786594
/content/aip/journal/apl/91/13/10.1063/1.2786594
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2786594

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of Hall mobility measured at various electron densities in a -type Si MOSFET.

Image of FIG. 2.
FIG. 2.

Shubnikov–de Haas oscillations measured at for various current densities.

Image of FIG. 3.
FIG. 3.

Electron temperature determined as a function of input power per electron at for various electron densities (symbols). In a steady state, the input power per electron is equal to the energy loss rate. Calculated energy loss rates due to acoustic phonon scattering via deformation potential coupling are also plotted by the solid, dashed, and dotted lines for each by setting to be . The dash-dotted line denotes the calculated result for at .

Image of FIG. 4.
FIG. 4.

dependence of the energy loss rate obtained experimentally (symbols) and theoretically (lines) for and . The solid, dashed, and dotted lines denote the results calculated with deformation potential constant as a parameter, taking both scattering-in and scattering-out processes into account. The dash-dotted line denotes the calculated result by considering only the scattering-out process with .

Tables

Generic image for table
Table I.

Materials parameters of Si used in the calculation.

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/content/aip/journal/apl/91/13/10.1063/1.2786594
2007-09-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2786594
10.1063/1.2786594
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