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Resistivity, electron concentration, and electron mobility as a function of V/III ratio for GaN thick films, which are measured by Hall measurements at room temperature.
X-ray linewidth for (0002) reflection, measured by high-resolution x-ray diffraction, as a function of V/III ratio for GaN thick films.
photoluminescence spectra of GaN thick films. Inset: emission intensities at near band edge and yellow emission band as a function of V/III ratio.
(a) Temperature-dependent curve of electron mobility in the range of for a GaN thick film grown in V/III and its theoretical fitting by using Matthiesen’s rule. is the total electron mobility, the optical-polar phonon scattering, is the piezoelectric scattering, is the deformation scattering, is the ionized-impurity scattering, is the dislocation scattering, and is the local-defect scattering. Open circles are experimental results and solid lines are theoretical results.
Ionized impurity concentration , dislocation density , and degree of local-defect scattering , estimated from theoretical fittings into temperature-dependent curves of electron mobility.
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