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Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy
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10.1063/1.2786851
/content/aip/journal/apl/91/13/10.1063/1.2786851
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2786851

Figures

Image of FIG. 1.
FIG. 1.

Resistivity, electron concentration, and electron mobility as a function of V/III ratio for GaN thick films, which are measured by Hall measurements at room temperature.

Image of FIG. 2.
FIG. 2.

X-ray linewidth for (0002) reflection, measured by high-resolution x-ray diffraction, as a function of V/III ratio for GaN thick films.

Image of FIG. 3.
FIG. 3.

photoluminescence spectra of GaN thick films. Inset: emission intensities at near band edge and yellow emission band as a function of V/III ratio.

Image of FIG. 4.
FIG. 4.

(a) Temperature-dependent curve of electron mobility in the range of for a GaN thick film grown in V/III and its theoretical fitting by using Matthiesen’s rule. is the total electron mobility, the optical-polar phonon scattering, is the piezoelectric scattering, is the deformation scattering, is the ionized-impurity scattering, is the dislocation scattering, and is the local-defect scattering. Open circles are experimental results and solid lines are theoretical results.

Tables

Generic image for table
Table I.

Ionized impurity concentration , dislocation density , and degree of local-defect scattering , estimated from theoretical fittings into temperature-dependent curves of electron mobility.

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/content/aip/journal/apl/91/13/10.1063/1.2786851
2007-09-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2786851
10.1063/1.2786851
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