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The electronic structure change with Gd doping of on silicon
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View: Figures


Image of FIG. 2.
FIG. 2.

(Color) Different band intensities for (a) pristine: 0%, (b) 3%, and (c) 15% Gd-doped films of . The photon energy is and the light incidence angle is 45°. The increasing contributions to the density of states near to the Fermi level are illustrated in the inset for 0% (black dots), 3% (open triangles), and 15% (stars) Gd doping levels in the inset at the bottom left, while the calculated density of states for the fluorite (black) and the monoclinic (red) phases of pure , in the region of the valence band maximum (the O bands) are shown in the upper left inset.

Image of FIG. 3.
FIG. 3.

Heterojunction diodes constructed Gd-doped on silicon. With oxygen vacancies, the 3% Gd-doped , is over compensated and forms a rectifying diode on -type silicon (a). The 10% Gd-doped is not overcompensated by oxygen vacancies and does not form a rectifying diode on -type silicon (b) but does do so on -type silicon (c).

Image of FIG. 1.
FIG. 1.

(Color) Part of the XRD pattern for 3%, 10%, and 15% Gd doped doped . The 3% Gd doped films are consistent with that of the in a simple monoclinic structure. The 10% doped samples are mixed monoclinic and majority cubic phases, as indicated, while 15% Gd-doped samples are in a fluorite phase. In the fluorite fcc phase, the lattice constant increases with increased Gd doping.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The electronic structure change with Gd doping of HfO2 on silicon