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(Color online) SEM images of vertically aligned (a) low-temperature-grown nanorods (LT-NRs) and (b) high-temperature-grown InN nanorods (HT-NRs), grown on Si(111) substrates by nitrogen-plasma-assisted molecule beam epitaxy. LT-NR has a uniform radius of , while that of the HT-InN nanorods reveals a bimodal size distribution.
(Color online) (a) Terahertz waveform generated from -type InN film (blue), HT- (red), and LT-NRs (black), respectively. Each sample is excited at the fluence of . (b) Peak amplitude of terahertz emission for InN film (solid squares), HT- (open circles), and LT-NRs (solid circles) as a function of laser pump power. Terahertz emissions from HT-NR and InN film begin to be nearly saturated from the low excitation level, while that from LT-NR keeps increasing with the excitation energy.
(Color online) Optical reflectivities in HT-NR (open circles), LT-NR (solid circles), and InN film (solid squares) as a function of excitation energy. Optical absorption in InN film is about 80%, while that in nanorods is about 95%.
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