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Suppression of oxygen vacancy formation in Hf-based high- dielectrics by lanthanum incorporation
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10.1063/1.2789392
/content/aip/journal/apl/91/13/10.1063/1.2789392
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2789392
/content/aip/journal/apl/91/13/10.1063/1.2789392
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/content/aip/journal/apl/91/13/10.1063/1.2789392
2007-09-25
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2789392
10.1063/1.2789392
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