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Suppression of oxygen vacancy formation in Hf-based high- dielectrics by lanthanum incorporation
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10.1063/1.2789392
/content/aip/journal/apl/91/13/10.1063/1.2789392
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2789392

Figures

Image of FIG. 1.
FIG. 1.

(Color) Relaxed structures for (a) in the vicinity of La atoms (model A) and (b) in pure (model B). Bond lengths are in angstroms.

Image of FIG. 2.
FIG. 2.

(Color online) Contour plots of the wave function corresponding to the -related gap states (a) in (model A) and (b) in (model B).

Image of FIG. 3.
FIG. 3.

(Color online) Contour plots of the total valence electron density in the vicinity of a La atom in model A. Each contour represents twice (or half) the density of the adjacent contour lines. The values shown in figures are in units of .

Tables

Generic image for table
Table I.

formation energies in HfLaO and .

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/content/aip/journal/apl/91/13/10.1063/1.2789392
2007-09-25
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2789392
10.1063/1.2789392
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