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Realization of thin film transistors through reactive evaporation process
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10.1063/1.2789788
/content/aip/journal/apl/91/13/10.1063/1.2789788
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2789788
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the thin film transistor.

Image of FIG. 2.
FIG. 2.

(Color online) X-ray diffraction pattern of the thin films annealed at different temperatures.

Image of FIG. 3.
FIG. 3.

(Color online) AFM images of the thin films annealed for at (a) and (b) .

Image of FIG. 4.
FIG. 4.

(Color online) Drain current-drain voltage characteristics of thin film transistors.

Image of FIG. 5.
FIG. 5.

Source to drain current as a function of gate voltage at a fixed drain voltage of .

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/content/aip/journal/apl/91/13/10.1063/1.2789788
2007-09-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of In2O3 thin film transistors through reactive evaporation process
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2789788
10.1063/1.2789788
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