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Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
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10.1063/1.2790075
/content/aip/journal/apl/91/13/10.1063/1.2790075
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790075
/content/aip/journal/apl/91/13/10.1063/1.2790075
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/content/aip/journal/apl/91/13/10.1063/1.2790075
2007-09-25
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790075
10.1063/1.2790075
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