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Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
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10.1063/1.2790075
/content/aip/journal/apl/91/13/10.1063/1.2790075
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790075
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Dependence of formation energies of intrinsic defects in on N chemical potential.

Image of FIG. 2.
FIG. 2.

(Color online) Defect energy levels aligned to the band offset of .

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of formation energies of N vacancies in and .

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/content/aip/journal/apl/91/13/10.1063/1.2790075
2007-09-25
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790075
10.1063/1.2790075
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