1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Type II strain layer superlattice detectors with polarity
Rent:
Rent this article for
USD
10.1063/1.2790078
/content/aip/journal/apl/91/13/10.1063/1.2790078
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790078
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Dark current vs applied bias at different temperatures for -on- diode with mesa side of (b) Experimental data of the .

Image of FIG. 2.
FIG. 2.

Temperature dependent normalized spectral response from the 8 ML InAs/8 ML GaSb SL diodes.

Image of FIG. 3.
FIG. 3.

Measured values for the specific detectivity as a function of the applied bias voltages at 82 and .

Loading

Article metrics loading...

/content/aip/journal/apl/91/13/10.1063/1.2790078
2007-09-27
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790078
10.1063/1.2790078
SEARCH_EXPAND_ITEM