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Fluorine counter doping effect in B-doped Si
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10.1063/1.2790373
/content/aip/journal/apl/91/13/10.1063/1.2790373
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790373

Figures

Image of FIG. 1.
FIG. 1.

B profiles as implanted (dotted line) and after SPE (continuous line). F profiles as implanted (dotted line plus open circles) and after SPE (continuous line plus open circles). All profiles are measured by SIMS.

Image of FIG. 2.
FIG. 2.

(a) F chemical profile as-implanted (dashed line) and after SPE (continuous line). (b) Concentration of negative charges (open circles), obtained by SCM and current (closed circles) measured by SSRM, after SPE.

Tables

Generic image for table
Table I.

Sheet resistance , carrier dose , mobility , and minimum channeling yield of B along three different axes (⟨100⟩, ⟨110⟩, and ⟨111⟩,) in the B junction and in the one coimplanted with F.

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/content/aip/journal/apl/91/13/10.1063/1.2790373
2007-09-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fluorine counter doping effect in B-doped Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790373
10.1063/1.2790373
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