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B profiles as implanted (dotted line) and after SPE (continuous line). F profiles as implanted (dotted line plus open circles) and after SPE (continuous line plus open circles). All profiles are measured by SIMS.
(a) F chemical profile as-implanted (dashed line) and after SPE (continuous line). (b) Concentration of negative charges (open circles), obtained by SCM and current (closed circles) measured by SSRM, after SPE.
Sheet resistance , carrier dose , mobility , and minimum channeling yield of B along three different axes (⟨100⟩, ⟨110⟩, and ⟨111⟩,) in the B junction and in the one coimplanted with F.
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