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Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation
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10.1063/1.2790478
/content/aip/journal/apl/91/13/10.1063/1.2790478
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790478

Figures

Image of FIG. 1.
FIG. 1.

MIM current response dependence on temperature at (from with a step). Inset shows that follows an Arrhenius law with an activation energy of .

Image of FIG. 2.
FIG. 2.

Current vs time measurements for the three stack configurations. and ).

Tables

Generic image for table
Table I.

Dielectric electrical characteristics of different stacks at ( means that layer is deposited on layer). Corresponding leakage currents vs time are shown in Fig. 2.

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/content/aip/journal/apl/91/13/10.1063/1.2790478
2007-09-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790478
10.1063/1.2790478
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