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Fermi level pinning by defects in -metal gate stacks
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10.1063/1.2790479
/content/aip/journal/apl/91/13/10.1063/1.2790479
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790479
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) O vacancy formation energy vs Fermi energy in . (b) Equivalent model with vacancy electrons falling to the Fermi level of a metal gate.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Experimental free energy of bulk metal oxide per O. (b) Energy of reaction (3).

Image of FIG. 3.
FIG. 3.

(Color online) (a) O vacancy formation energy vs Fermi energy in on a Si substrate, with the reaction allowed. (b) Band bending due to charge vacancies.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Calculated effective work functions and depletion layer potential vs vacuum work function of gate metal. (b) Calculated vacancy density.

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/content/aip/journal/apl/91/13/10.1063/1.2790479
2007-09-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fermi level pinning by defects in HfO2-metal gate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790479
10.1063/1.2790479
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