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Cross-sectional view of fabrication flow. (a) Gate (G), source (S), and drain electrodes (D) are manufactured using ink-jetted nanoparticles. Polyimide gate dielectric layers are also manufactured by ink-jet printing systems. Epoxy partitions are created using screen printing systems. Masking resist is patterned using screen printing to form shadow masks. (b) A pentacene channel layer is deposited by thermal evaporation through the printed shadow mask. (c) The shadow mask of the resist is peeled off without using any solvent. (d) The pentacene pattern is the same as the printed resist pattern.
(a) An image of a vacuum evaporation machine with a metal cylinder wrapped in an organic transistor active matrix sheet. A magnified image of the active matrix sheet patterned screen-printed shadow masks is also shown. (b) A photograph of peeling off a printed shadow mask. (c) Micrograph of a manufactured organic FET matrix obtained using screen-printed shadow masks. WL and BL represent the word and bit lines, respectively.
(a) Micrograph of masking resist patterned by screen printing systems on a polyimide film. Pentacene is deposited by thermal evaporation. (b) After peeling off the mask, the fine lines of pentacene whose width and spacing are the same as the resist pattern are observed.
(a) Source-drain current of the FETs as a function of the source-drain voltage . The gate voltage is varied from in steps of . (b) Transfer curves of the same device ( is varied from with ). The channel width and length are 2500 and , respectively.
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