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measurements on PNO taken pre- and post-NBTS ( at for ).
Wide scan SDT spectrum of a PNO before (a) and after (b) NBTI stress of at for . Extensive signal averaging of the poststress spectrum (c) reveals two hyperfine side peaks. The spectrometer gain is 20 times greater in (c).
Measured magnetic resonance parameters of important silicon dangling bond defects.
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