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Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices
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10.1063/1.2790776
/content/aip/journal/apl/91/13/10.1063/1.2790776
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790776

Figures

Image of FIG. 1.
FIG. 1.

measurements on PNO taken pre- and post-NBTS ( at for ).

Image of FIG. 2.
FIG. 2.

Wide scan SDT spectrum of a PNO before (a) and after (b) NBTI stress of at for . Extensive signal averaging of the poststress spectrum (c) reveals two hyperfine side peaks. The spectrometer gain is 20 times greater in (c).

Tables

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Table I.

Measured magnetic resonance parameters of important silicon dangling bond defects.

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/content/aip/journal/apl/91/13/10.1063/1.2790776
2007-09-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790776
10.1063/1.2790776
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