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Temperature effects of Si interface passivation layer deposition on high- III-V metal-oxide-semiconductor characteristics
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10.1063/1.2790780
    InJo Ok1,a), H. Kim1,b), M. Zhang1,c), F. Zhu1,d), S. Park1,e), J. Yum1,f), H. Zhao1,g) and Jack C. Lee1,h)
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, Texas 78758, USA
    a) Electronic mail: okinjo@mail.utexas.edu. Tel.: 512-471-1627. FAX: 512-471-5625.
    b) Electronic mail: hskim1997@mail.utexas.edu. Tel.: 512-471-1627.
    c) Electronic mail: mhzhang1969@yahoo.com. Tel.: 512-471-1627.
    d) Electronic mail: zhufeng@mail.utexas.edu. Tel.: 512-471-1627.
    e) Electronic mail: sipark@mail.utexas.edu. Tel.: 512-471-1627.
    f) Electronic mail: redeyes78@mail.utexas.edu. Tel.: 512-471-1627.
    g) Electronic mail: zhaohan@mail.utexas.edu. Tel.: 512-471-1627.
    h) Electronic mail: jacklee@uts.cc.utexas.edu. Tel.: 512-471-8423.
    Appl. Phys. Lett. 91, 132104 (2007); http://dx.doi.org/10.1063/1.2790780
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/content/aip/journal/apl/91/13/10.1063/1.2790780
2007-09-25
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790780
10.1063/1.2790780
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