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(Color online) (a) characteristics of MOSCAPs with thick amorphous Si IPL as function of Si IPL deposition temperature. (b) EOT of vs Si deposition temperature with different deposition temperatures before PMA and after PMA.
Frequency dispersion vs PDA time as a function of Si IPL deposition temperature: (a) capacitance difference (%) between and , (b) voltage difference (mV) at flatband voltage, (c) frequency dispersion vs PMA time with different PDA times of Si deposition condition at room temperature, and (d) Si deposition condition at .
(a) by using conductance method with parameter fitting at . (b) Hysteresis for ’s (sweep rate: ) vs PDA time as function of Si deposition temperature.
Leakage current density vs EOT as a function of Si IPL deposition temperature.
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