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Temperature effects of Si interface passivation layer deposition on high- III-V metal-oxide-semiconductor characteristics
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    InJo Ok1,a), H. Kim1,b), M. Zhang1,c), F. Zhu1,d), S. Park1,e), J. Yum1,f), H. Zhao1,g) and Jack C. Lee1,h)
    + View Affiliations - Hide Affiliations
    1 Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, Texas 78758, USA
    a) Electronic mail: okinjo@mail.utexas.edu. Tel.: 512-471-1627. FAX: 512-471-5625.
    b) Electronic mail: hskim1997@mail.utexas.edu. Tel.: 512-471-1627.
    c) Electronic mail: mhzhang1969@yahoo.com. Tel.: 512-471-1627.
    d) Electronic mail: zhufeng@mail.utexas.edu. Tel.: 512-471-1627.
    e) Electronic mail: sipark@mail.utexas.edu. Tel.: 512-471-1627.
    f) Electronic mail: redeyes78@mail.utexas.edu. Tel.: 512-471-1627.
    g) Electronic mail: zhaohan@mail.utexas.edu. Tel.: 512-471-1627.
    h) Electronic mail: jacklee@uts.cc.utexas.edu. Tel.: 512-471-8423.
    Appl. Phys. Lett. 91, 132104 (2007); http://dx.doi.org/10.1063/1.2790780
View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) characteristics of MOSCAPs with thick amorphous Si IPL as function of Si IPL deposition temperature. (b) EOT of vs Si deposition temperature with different deposition temperatures before PMA and after PMA.

Image of FIG. 2.
FIG. 2.

Frequency dispersion vs PDA time as a function of Si IPL deposition temperature: (a) capacitance difference (%) between and , (b) voltage difference (mV) at flatband voltage, (c) frequency dispersion vs PMA time with different PDA times of Si deposition condition at room temperature, and (d) Si deposition condition at .

Image of FIG. 3.
FIG. 3.

(a) by using conductance method with parameter fitting at . (b) Hysteresis for ’s (sweep rate: ) vs PDA time as function of Si deposition temperature.

Image of FIG. 4.
FIG. 4.

Leakage current density vs EOT as a function of Si IPL deposition temperature.


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Scitation: Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics