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Green light-emitting diodes with self-assembled In-rich InGaN quantum dots
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10.1063/1.2790783
/content/aip/journal/apl/91/13/10.1063/1.2790783
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790783
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A cross-sectional TEM image of InGaN layer grown on a rough GaN surface. The inset of figure shows QDs embedded in the InGaN matrix.

Image of FIG. 2.
FIG. 2.

(a) Laser power dependent PL spectra of InGaN layers grown on a rough GaN layer at room temperature. (b) Normalized integrated PL intensity as a function of for QDs related emission.

Image of FIG. 3.
FIG. 3.

characteristic of the QD LED.

Image of FIG. 4.
FIG. 4.

Electroluminescence spectra of the QD LED with increasing input current at room temperature.

Image of FIG. 5.
FIG. 5.

Room temperature optical output power of a green QD LED. The solid line serves as a reference guide.

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/content/aip/journal/apl/91/13/10.1063/1.2790783
2007-09-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Green light-emitting diodes with self-assembled In-rich InGaN quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790783
10.1063/1.2790783
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