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A cross-sectional TEM image of InGaN layer grown on a rough GaN surface. The inset of figure shows QDs embedded in the InGaN matrix.
(a) Laser power dependent PL spectra of InGaN layers grown on a rough GaN layer at room temperature. (b) Normalized integrated PL intensity as a function of for QDs related emission.
characteristic of the QD LED.
Electroluminescence spectra of the QD LED with increasing input current at room temperature.
Room temperature optical output power of a green QD LED. The solid line serves as a reference guide.
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