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Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
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10.1063/1.2790787
/content/aip/journal/apl/91/13/10.1063/1.2790787
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790787

Figures

Image of FIG. 1.
FIG. 1.

Characteristic trapping frequencies for electrons (solid line) and holes (dashed-dotted line) in Si (a) and GaAs (b) as a function of the interface trap energy within the bandgap. The dashed horizontal lines indicate the frequency range available for measurements, . The dotted vertical lines indicate the trap energy regions within the bandgap that are actually measured with this frequency range.

Image of FIG. 2.
FIG. 2.

Characteristic trapping frequencies for electrons (solid line) and holes (dashed-dotted line) in GaAs at as a function of the interface trap energy within the bandgap. The dashed horizontal lines indicate the frequency range available for measurements, . The dotted vertical lines indicate the trap energy regions within the bandgap that are actually measured with this frequency range.

Image of FIG. 3.
FIG. 3.

measurements performed on a GaAs capacitor with of used as gate oxide. The diameter of the measured capacitor is . The figure on the left shows room temperature measurements, whereas the figure on the right shows the results for measurements performed at . For both low and high temperature measurements the gate leakage currents of the capacitor are below for all applied voltages.

Tables

Generic image for table
Table I.

Parameter values used for the plots in Figs. 1 and 2 (Ref. 5).

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/content/aip/journal/apl/91/13/10.1063/1.2790787
2007-09-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790787
10.1063/1.2790787
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