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(Color online) AFM Image of a transistor structure with and produced by electron beam lithography. Bright areas are the interdigitated gold electrodes on top of .
Charge carrier mobilities according to the gradual channel approximation vs length of system. Inset: structure of with .
(Color online) left: intrinsic charge carrier mobilities vs channel length for submicrometer devices. Right: fitted example with standard resistors at source and drain for a transfer curve at with obvious contact effects for a device.
Average contact resistance values for nanoscale devices depending on the number of thiophene units.
Melting (from Ref. 13 and SynCom B.V.), evaporation, and sample preparation temperatures as well as maximum achieved mobilities in air of reference devices.
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