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Tuning the contact resistance in nanoscale oligothiophene field effect transistors
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10.1063/1.2790789
/content/aip/journal/apl/91/13/10.1063/1.2790789
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790789

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM Image of a transistor structure with and produced by electron beam lithography. Bright areas are the interdigitated gold electrodes on top of .

Image of FIG. 2.
FIG. 2.

Charge carrier mobilities according to the gradual channel approximation vs length of system. Inset: structure of with .

Image of FIG. 3.
FIG. 3.

(Color online) left: intrinsic charge carrier mobilities vs channel length for submicrometer devices. Right: fitted example with standard resistors at source and drain for a transfer curve at with obvious contact effects for a device.

Image of FIG. 4.
FIG. 4.

Average contact resistance values for nanoscale devices depending on the number of thiophene units.

Tables

Generic image for table
Table I.

Melting (from Ref. 13 and SynCom B.V.), evaporation, and sample preparation temperatures as well as maximum achieved mobilities in air of reference devices.

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/content/aip/journal/apl/91/13/10.1063/1.2790789
2007-09-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tuning the contact resistance in nanoscale oligothiophene field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790789
10.1063/1.2790789
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