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Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer
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10.1063/1.2790813
/content/aip/journal/apl/91/13/10.1063/1.2790813
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790813
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) [(a) and (b)] Cross-section TEM images of AlGaN layer grown on an AlN buffer layer (a) without a GaN interlayer and (b) with a GaN interlayer. [(c) and (d)] TEM images of AlGaN layers grown using a GaN interlayer taken at higher magnification, (c) and (d) .

Image of FIG. 2.
FIG. 2.

(Color online) (a) AFM picture of GaN grown on an AlN buffer layer. (b) Plan-view dark-field TEM image of GaN grown on an AlN buffer layer. (c) EDX spectra measured in areas A, B, and C marked in (b).

Image of FIG. 3.
FIG. 3.

(Color online) Micro-Raman spectra of GaN and GaN grown on an AlN buffer layer.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Schematic drawing of an AlGaN layer grown using a thin GaN interlayer on an AlN buffer layer. “⊥” and black lines represent MDs and TDs, respectively. (b) Cross-sectional TEM image of an AlGaN layer grown using a GaN interlayer. Few TDs are observed in the AlGaN grown above the interface with MDs. (c) Al and Ga counts of EDX spectra measured within the interlayer above the AlN between two dislocation clusters marked by “DC1” and “DC2.”

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/content/aip/journal/apl/91/13/10.1063/1.2790813
2007-09-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790813
10.1063/1.2790813
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