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Cu films containing insoluble Ru and on barrierless Si for excellent property improvements
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10.1063/1.2790843
/content/aip/journal/apl/91/13/10.1063/1.2790843
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790843
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Electrical resistivity results for Cu(Ru), , and pure Cu films (Ref. 5) annealed at various temperatures.

Image of FIG. 2.
FIG. 2.

XRD and electron diffraction patterns of as-deposited Cu(Ru) and films.

Image of FIG. 3.
FIG. 3.

XRD patterns of Cu(Ru), , and pure Cu films annealed at various temperatures.

Image of FIG. 4.
FIG. 4.

TEM images of as-deposited Cu(Ru) (a), (b), and pure Cu (c) films.

Image of FIG. 5.
FIG. 5.

TEM micrographs of Cu(Ru) (a) and (b) films annealed at 580 and , respectively.

Image of FIG. 6.
FIG. 6.

(Color online) Leakage current densities of pure Cu (Ref. 4), Cu(Ru), and films on MOS structures annealed at .

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/content/aip/journal/apl/91/13/10.1063/1.2790843
2007-09-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2790843
10.1063/1.2790843
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