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(Color online) DLTS signals at from QDs (sample I, no InGaAs) as a function of reverse bias across the Schottky diode for tuning frequencies in the range of , corresponding to emission windows in the range of . Peaks related to tunneling electrons from the eigenstates labeled and , respectively.
(Color online) Theoretical activation plot for electron emission from - and -state distributions calculated at the steady-state bias equal to . The scale of the vertical axis is proportional to the probability of an emission event. Calculations were performed on the basis of the model reported in Refs. 1 and 2 and using data, which are contained in Table I. Characteristic regions of the plot, in which particular electron transitions dominate, labeled A–E.
(Color online) The emission probability as a function of at corresponding to in the theoretical activation plot in Fig. 2 for (a) and (b) reverse biases. Vertical dashed lines mark the tuning interval between 2.5 and , corresponding to an emission window interval between 5.4 and as used in the experimental results shown in Figs. 1 and 5. The intercept points A–D denote values proportional to the DLTS amplitudes for these two frequencies. Arrows indicate the direction of change when increasing the tuning frequency.
(Color online) Theoretical plot for DLTS signal as a function of reverse bias across the Schottky diode for tuning frequencies in the range of . Data from Table I were used. For the tunneling probabilities data from Ref. 7 were used by fitting the pre-exponential factor in Korol’s equation (Ref. 9).
(Color online) DLTS signals at from QDs with a thick layer (sample II) as a function of reverse bias across the Schottky diode for tuning frequencies in the range of .
Data used in calculations for determining quantities presented in Figs. 2–4.
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