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XPS spectra of (a) O and (b) C for Rh(111) during annealing at various temperatures.
RHEED patterns from AlN films grown at (a) and (b) . The incidence of the electron beam is parallel to .
Growth temperature dependence of (a) the interfacial layer thickness between AlN films and Rh substrates, evaluated using GIXR and (b) XPS spectra of Rh from the surface of .
An EBSD pole figure for the sample grown at .
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