1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Indium selenide nanowire phase-change memory
Rent:
Rent this article for
USD
10.1063/1.2793505
/content/aip/journal/apl/91/13/10.1063/1.2793505
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793505
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) TEM image of an nanowire grown on substrate using gold nanoparticles as catalyst. Top left inset shows the nanowire crystalline lattice structure and bottom right inset shows the SAED pattern. (b) Top view of the fabricated nanowire memory device. Pt interconnection lines were deposited by focused ion beam, linking the nanowire with prepatterned Mo probing pads.

Image of FIG. 2.
FIG. 2.

Resistance of nanowire memory (measured at a small read voltage of ) as a function of applied voltage in a pulse-mode test. (a) Switching from low-resistance state to high-resistance state with a fixed pulse width of . The reset starts to occur at . (b) Switching from high-resistance state to low-resistance state with a fixed pulse width of . The set starts to occur at .

Image of FIG. 3.
FIG. 3.

(a) Measured characteristics and (b) characteristics of nanowire memory, both plots showing four successive testing sweeps after nanowire was either set to low-resistance state or reset to high-resistance state.

Image of FIG. 4.
FIG. 4.

Measured nanowire device resistance for a series of high and low resistance states after repeated reset-set programing cycles. Device was switched from LRS to HRS using a reset pulse (with sharp fall-down edge), and from HRS to LRS using a set pulse.

Loading

Article metrics loading...

/content/aip/journal/apl/91/13/10.1063/1.2793505
2007-09-28
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indium selenide nanowire phase-change memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793505
10.1063/1.2793505
SEARCH_EXPAND_ITEM