No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High bias voltage effect on spin-dependent conductivity and shot noise in carbon-doped magnetic tunnel junctions
5.M. Bowen, V. Cros, F. Petroff, A. Fert, C. Martínez Boubeta, J. L. Costa-Krämer, J. V. Anguita, A. Cebollada, F. Briones, J. M. de Teresa, L. Morellón, M. R. Ibarra, F. Güell, F. Peiró, and A. Cornet, Appl. Phys. Lett. 79, 1655 (2001).
6.J. Faure-Vincent, C. Tiusan, E. Jouguelet, F. Canet, M. Sajieddin, C. Bellouard, E. Popova, M. Hehn, F. Montaigne, and A. Schuhl, Appl. Phys. Lett. 82, 4507 (2003).
11.R. Guerrero, F. G. Aliev, R. Villar, J. Hauch, M. Fraune, G. Güuntherodt, K. Rott, H. Bückl, and G. Reiss, Appl. Phys. Lett. 87, 042501 (2005).
14.The spatial variation of the realistic electronic structure of the interface (related to realistic morphology) will lead to a distribution in energy of the interfacial resonance.
16.The interfacial resonance state of Fe has a orbital character and belongs to the symmetry. However, due to the strong localization of the band, this state decays rapidly with the MgO thickness. Therefore, for large MgO thickness its contribution to the total AP conductivity is expected to be small.
Article metrics loading...
Full text loading...
Most read this month