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heteronanocrystal floating gate memory
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10.1063/1.2793687
/content/aip/journal/apl/91/13/10.1063/1.2793687
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793687
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images for (a) the original Si NCs and (b) the HNCs. The same scale is used for both images. The sharper feature in HNC image suggests that HNCs are higher due to extra growth of Ge on Si.

Image of FIG. 2.
FIG. 2.

XPS elemental analysis for Si NCs (bottom curve) and HNCs (top curve).

Image of FIG. 3.
FIG. 3.

HNC memory transfer characteristics under fresh, written, and erased conditions.

Image of FIG. 4.
FIG. 4.

Writing and erasing performance comparison between the Si NC memory devices and the HNC memory devices.

Image of FIG. 5.
FIG. 5.

Endurance characteristics of Si NC memory devices and HNC memory devices.

Image of FIG. 6.
FIG. 6.

Retention characteristics of Si NC memory devices and HNC memory devices.

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/content/aip/journal/apl/91/13/10.1063/1.2793687
2007-09-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge∕Si heteronanocrystal floating gate memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793687
10.1063/1.2793687
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