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Temperature dependence of current-voltage characteristics of -type double heterojunction bipolar transistors
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10.1063/1.2793819
/content/aip/journal/apl/91/13/10.1063/1.2793819
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793819
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The common-emitter characteristics of the -type DHBT measured at (a) RT and (b) .

Image of FIG. 2.
FIG. 2.

Current gain as a function of the collector current at temperatures ranging from RT to .

Image of FIG. 3.
FIG. 3.

Temperature dependence of the maximum current gain.

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/content/aip/journal/apl/91/13/10.1063/1.2793819
2007-09-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of current-voltage characteristics of npn-type GaN∕InGaN double heterojunction bipolar transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793819
10.1063/1.2793819
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