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Midinfrared quantum well laser diodes grown on GaAs
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10.1063/1.2793821
/content/aip/journal/apl/91/13/10.1063/1.2793821
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793821
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section (a) showing the structure of the QW laser and (b) the calculated energy band diagram of the diode under zero applied bias.

Image of FIG. 2.
FIG. 2.

Measured emission spectra as a function of temperature. The inset shows the predicted emission wavelength as a function of temperature.

Image of FIG. 3.
FIG. 3.

Typical characteristics measured as a function of temperature.

Image of FIG. 4.
FIG. 4.

Threshold current densities , extracted from the data shown in Fig. 3 by a linear fit to the points above threshold, as a function of temperature. The two lines are fits to the data from and from , yielding values of 136 and , respectively.

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/content/aip/journal/apl/91/13/10.1063/1.2793821
2007-09-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2793821
10.1063/1.2793821
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