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High electron mobility in nearly lattice-matched heterostructure field effect transistors
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10.1063/1.2794419
/content/aip/journal/apl/91/13/10.1063/1.2794419
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2794419

Figures

Image of FIG. 1.
FIG. 1.

(Color online) High resolution XRD (0002) scans of HFET structures with In compositions in the range of 20% to 12%. XRD datum for a conventional HFET is also plotted for comparison. The plots are vertically shifted for clarity.

Image of FIG. 2.
FIG. 2.

(Color online) AFM image of an sample with a GaN cap layer.

Image of FIG. 3.
FIG. 3.

(Color online) Temperature dependent (a) Hall mobility and (b) sheet carrier density for the nearly lattice-matched HFETs with and without a AlN spacer. The inset shows the effect of AlN spacer on Hall mobility and sheet carrier density of HFET structures.

Image of FIG. 4.
FIG. 4.

Typical characteristics of FETs fabricated on the nearly lattice-matched samples. The gate length is , gate width is , and the source-drain separation is . The maximum transconductance is .

Tables

Generic image for table
Table I.

Measured Hall mobility and sheet carrier density for HFETs at 300 and .

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/content/aip/journal/apl/91/13/10.1063/1.2794419
2007-09-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/13/10.1063/1.2794419
10.1063/1.2794419
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