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(Color online) High resolution XRD (0002) scans of HFET structures with In compositions in the range of 20% to 12%. XRD datum for a conventional HFET is also plotted for comparison. The plots are vertically shifted for clarity.
(Color online) AFM image of an sample with a GaN cap layer.
(Color online) Temperature dependent (a) Hall mobility and (b) sheet carrier density for the nearly lattice-matched HFETs with and without a AlN spacer. The inset shows the effect of AlN spacer on Hall mobility and sheet carrier density of HFET structures.
Typical characteristics of FETs fabricated on the nearly lattice-matched samples. The gate length is , gate width is , and the source-drain separation is . The maximum transconductance is .
Measured Hall mobility and sheet carrier density for HFETs at 300 and .
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