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Improving ion irradiated high Josephson junctions by annealing: The role of vacancy-interstitial annihilation
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10.1063/1.2783227
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Affiliations:
1 Laboratoire Photons Et Matière, ESPCI, 10 Rue Vauquelin, 75231 Paris, France
2 Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis, France
3 UMR-CNRS/THALES, Route D128, 91767 Palaiseau, France
a) Electronic mail: martin.sirena@espci.fr
Appl. Phys. Lett. 91, 142506 (2007)
/content/aip/journal/apl/91/14/10.1063/1.2783227
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2783227
View: Figures

## Figures

FIG. 1.

(Color online) Normalized resistance as a function of temperature for JJ made on the same wafer by oxygen ion irradiation, and then further annealed for different times (, , and and ). The arrows indicate the maximum spread in for a given annealing time.

FIG. 2.

Critical current as a function of the reduced temperature for the Josephson junctions irradiated at for different annealing times (, , and .). Lines between the curves are a guide for the eyes. Arrows indicate the mean value and the spread of at . The insert shows and the product for the JJ irradiated at as functions of the annealing time.

FIG. 3.

spread as a function of for the JJ made on the same wafer by (closed symbols) and (open symbols) oxygen ion irradiation. Shown in solid lines are the simulation results for the vacancy-interstitial annihilation model, and in dashed lines are those for the diffusion mechanism.

/content/aip/journal/apl/91/14/10.1063/1.2783227
2007-10-03
2014-04-20

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