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(a) Transfer characteristics of bottom-gate, bottom-contact PTAA transistor before (solid line) and after (dashed line) exposure to with the device structure shown in the inset. (b) Analogous plot for reference device. The molecular structure of PTAA is shown in the inset. (c) Variation of the linear mobility with temperature for the device in Fig. 1(a) before (squares) and after (circles) exposure to . (d) Variation of the estimated activation energy with gate voltage for the same device before and after exposure to .
(a) Evolution of the in situ measured transfer characteristics of a PTAA transistor with x-ray exposure. From right to left, the characteristics are measured for x-ray doses of 0, 0.5, 1, 5, 10, 20, 50, 100, and . (b) Variation of the onset and threshold voltages with x-ray exposure. On the right-hand axis is plotted the estimated variation of the number of detrapping events per incident x-ray photon.
(a) Transfer characteristics of a bottom-gate, bottom-contact F8T2 transistor before (solid line) and after (dashed line) exposure to . In the inset is plotted the temperature variation of the linear mobility before (squares) and after (circles) exposure to . (b) Saturation characteristics of F8T2 transistor measured in situ before and after stressing (prior to any x-ray exposure) and at various points during recovery. Solid lines indicate recovery in the dark and dashed lines indicate recovery during x-ray exposure. The variation of the threshold voltage shift with time is shown in the upper right inset and the molecular structure of F8T2 is shown in the lower right inset.
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