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(a) Chemical structures of PEDOT (left) and PSS (right). (b) Photoelectron yield spectrum of a PEDOT:PSS film coated on glass substrate. Broken straight lines denote the fitting lines to evaluate the work function . The inset shows the film thickness and the electrical resistivity of PEDOT:PSS films formed on glass substrates as a function of the rotation speed during spin coating.
(a) The schematic cross section of the PEDOT:PSS/ZnO Schottky junction. (b) The current density–voltage characteristics for the PEDOT:PSS/ZnO Schottky junction. The ideality factor and the Schottky barrier height are also shown. The histogram of among 37 junctions on a ZnO substrate is shown in the inset. (c) The capacitance-voltage characteristics for the PEDOT:PSS/ZnO Schottky junction measured at . The built-in potential , ionized donor concentration , and the depletion layer width at are also indicated. The frequency dependence of the junction capacitance at is shown in the inset.
The schematic energy band diagram of the PEDOT:PSS/ZnO Schottky junction. The evaluated junction parameters are also shown. , , and are the vacuum level, the Fermi energy, and the bottom of the conduction band, respectively. is the energy difference between and . and are the electron affinity from and measurements, respectively. is the vacuum level shift. The positive and negative symbols represent the electric dipole layer spontaneously formed at the interface.
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