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Contrasting aging behavior of as-grown and annealed single crystals grown by KF-flux technique
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10.1063/1.2790480
/content/aip/journal/apl/91/14/10.1063/1.2790480
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2790480
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Contrasting hysteresis loops of as-grown and annealed ( , ) single crystals. (a1) , (b1) , and (c1) show their hysteresis loops before aging; (a2) , (b2) , and (c2) show their hysteresis loops after aging at for .

Image of FIG. 2.
FIG. 2.

Dielectric aging behavior of as-grown and annealed ( , ) single crystals. is the dielectric permittivity of unaged sample and is the dielectric permittivity at (aging time). is a measure of relative change of permittivity.

Image of FIG. 3.
FIG. 3.

Impurity ( and ) content of KF-grown single crystal as a function of annealing time at . The point at 0, 5, and represents the as-grown and annealed ( , ) samples, respectively.

Image of FIG. 4.
FIG. 4.

Microscopic mechanism of the aging effect in single crystals associated with defect complexes (a) , (b) , and (c) , respectively. (a1), (b1), and (c1): equilibrium paraelectric state; (a2), (b2), and (c2): unaged ferroelectric state; (a3), (b3), and (c3): ferroelectric state after aged; and (a4), (b4), and (c4): the ferroelectric state after a domain switching by an electric field. is the conditional probability of finding an oxygen vacancy at sites (1–12) around a given acceptor at site 0. is the conditional probability of finding ions at sites (1–12) around a given acceptor or vacancy at site 0. The defect symmetry is defined by the symmetry of the or , as shown in the figures. Large squares/rectangles represent crystal symmetry and small squares/rectangles represent defect symmetry.

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/content/aip/journal/apl/91/14/10.1063/1.2790480
2007-10-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Contrasting aging behavior of as-grown and annealed BaTiO3 single crystals grown by KF-flux technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2790480
10.1063/1.2790480
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