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Patterning-controlled morphology of spatially and dimensionally constrained oxide nanostructures
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10.1063/1.2790496
/content/aip/journal/apl/91/14/10.1063/1.2790496
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2790496
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) ESEM image of BTO nanofrustums on (100) SRO/STO substrate. White arrows indicate the ⟨001⟩ directions of the substrate. Inset shows the possible facets of the BTO frustums. (b) TEM cross-sectional image of BTO/SRO/STO structures. Sample is cut along ⟨110⟩ direction of the substrate, through 10 nanopatterns. (c) TEM high resolution image at BTO/SRO interface showing the heteroepitaxy between the nanostructure and the substrate. Arrow indicates the interface position. The uneven background is due to the ion beam damage introduced during FIB lift-off procedure.

Image of FIG. 2.
FIG. 2.

[(a) and (b)] BTO frustum and pyramid, obtained by patterning with different resist thickness. (c) ESEM image of CFO line patterned along ⟨100⟩ MgO. (d) shows detail of the zig-zag edge. (e) ESEM image of CFO line patterned along ⟨110⟩ MgO. (f) Image of one end of the line showing the faceting detail.

Image of FIG. 3.
FIG. 3.

(Color online) (a) EELS map across one BTO pattern showing the chemical constituent distribution. The color scheme is set as follows: ( edges), ( edges), ( edge; carbon is introduced during TEM sample preparation), which brings a yellowish hue to the BTO pattern. The black layer under BTO pattern corresponds to the SRO film. Inset shows the corresponding dark field STEM image of the pattern. Pattern edge is indicated by the dash line. (b) Bias-phase hysteresis loop obtained with PFM from one BTO nanofrustum with width on SRO/STO substrate.

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/content/aip/journal/apl/91/14/10.1063/1.2790496
2007-10-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Patterning-controlled morphology of spatially and dimensionally constrained oxide nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2790496
10.1063/1.2790496
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