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Room-temperature lasing at of quantum wells grown on GaAs substrates using an interfacial misfit array
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10.1063/1.2793186
/content/aip/journal/apl/91/14/10.1063/1.2793186
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2793186
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the fabricated six-layer QW laser structure. (b) and (c) are cross-sectional TEM images of the IMF array between GaAs and GaSb.

Image of FIG. 2.
FIG. 2.

characteristics of the fabricated lasers with and without annealing for metal contact.

Image of FIG. 3.
FIG. 3.

characteristics of six-layer QW lasers with at under a pulsed condition (0.1% duty cycle). Inset is EL spectra with different ranging from to .

Image of FIG. 4.
FIG. 4.

(a) Temperature dependence of the and under a pulsed condition (0.1% duty cycle). (b) vs duty cycles ranging from 0.05% to 4%.

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/content/aip/journal/apl/91/14/10.1063/1.2793186
2007-10-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/14/10.1063/1.2793186
10.1063/1.2793186
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